| 1 |
Fabrication and characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes
Rao GK, Bangera KV, Shivakumar GK
Current Applied Physics, 13(1), 298, 2013 |
| 2 |
Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
Manifacier JC
Solid-State Electronics, 80, 45, 2013 |
| 3 |
A simulation study of thin film tandem solar cells with a nanoplate absorber bottom cell
Chang ST, Hsieh BF, Liu YC
Thin Solid Films, 520(8), 3369, 2012 |
| 4 |
Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures
Manifacier JC
Solid-State Electronics, 54(12), 1511, 2010 |
| 5 |
Preparation and performance of novel Li-Ti-Si-P-O-N thin-film electrolyte for thin-film lithium batteries
Wu F, Liu YD, Chen RJ, Chen S, Wang GQ
Journal of Power Sources, 189(1), 467, 2009 |
| 6 |
Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes - A new approach
Manifacier JC
Solid-State Electronics, 52(8), 1162, 2008 |
| 7 |
Dielectric relaxation in nanopillar NiFe-silicon structures in high magnetic fields
Vasic R, Brooks JS, Jobiliong E, Aravamudhan S, Luongo K, Bhansali S
Current Applied Physics, 7(1), 34, 2007 |
| 8 |
A comparison of the performance of different PV module types in temperate climates
Carr AJ, Pryor TL
Solar Energy, 76(1-3), 285, 2004 |
| 9 |
Relaxation kinetics of mechanically alloyed powders. Fe-Ni-Si-P: A case study
Clavaguera-Mora MT, Sunol JJ, Clavaguera N
Materials Science Forum, 360-3, 459, 2001 |
| 10 |
Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3
Hirose F
Journal of Crystal Growth, 212(1-2), 103, 2000 |
