화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography
Lee D, Shin IS, Jin L, Kim D, Park Y, Yoon E
Journal of Crystal Growth, 444, 9, 2016
2 Integration of Self-Assembled Epitaxial BiFeO3-CoFe2O4 Multiferroic Nanocomposites on Silicon Substrates
Kim DH, Aimon NM, Sun XY, Kornblum L, Walker FJ, Ahn CH, Ross CA
Advanced Functional Materials, 24(37), 5889, 2014
3 Surface morphology of amorphous germanium thin films following thermal outgassing of SiO2/Si substrates
Valladares LD, Dominguez AB, Llandro J, Holmes S, Quispe OA, Langford R, Aguiar JA, Barnes CHW
Applied Surface Science, 316, 15, 2014
4 3D heteroepitaxy of mismatched semiconductors on silicon
Falub CV, Kreiliger T, Isa F, Taboada AG, Meduna M, Pezzoli F, Bergamaschini R, Marzegalli A, Muller E, Chrastina D, Isella G, Neels A, Niedermann P, Dommann A, Miglio L, von Kanel H
Thin Solid Films, 557, 42, 2014
5 Nitride-based concentrator solar cells grown on Si substrates
Liu CY, Lai CC, Liao JH, Cheng LC, Liu HH, Chang CC, Lee GY, Chyi JI, Yeh LK, He JH, Chung TY, Huang LC, Lai KY
Solar Energy Materials and Solar Cells, 117, 54, 2013
6 Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates
Chang SP, Chang SJ, Lu CY, Chiou YZ, Chuang RW, Lin HC
Journal of Crystal Growth, 311(10), 3003, 2009
7 High temperature performance of AlGaN/GaN HEMTs on Si substrates
Tan WS, Uren MJ, Fry PW, Houston PA, Balmer RS, Martin T
Solid-State Electronics, 50(3), 511, 2006
8 Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition
Nishiguchi T, Mukai Y, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S
Materials Science Forum, 457-460, 285, 2004
9 Etch characteristics of HfO2 films on Si substrates
Norasetthekul S, Park PY, Baik KH, Lee KP, Shin JH, Jeong BS, Shishodia V, Norton DP, Pearton ST
Applied Surface Science, 187(1-2), 75, 2002
10 Oriented growth of LiNbO3 thin films for SAW properties
Bornand V, Huet I, Chateigner D, Papet P
Materials Science Forum, 408-4, 1573, 2002