화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress
Kim JG, Kim YH, Lee KM, Sohn HC, Choi DJ
Thermochimica Acta, 542, 6, 2012
2 Effect of nitrogen doping on the formation of planar defects in 4H-SiC
Siche D, Albrecht M, Doerschel J, Irmscher K, Rost RJ, Rossberg M, Schulz D
Materials Science Forum, 483, 39, 2005
3 Direct synthesis and growth of SiC single crystal from ultrafine particle precursor
Yamada Y, Sagawa K
Materials Science Forum, 389-3, 159, 2002
4 Continuous growth of SiC single crystal from ultrafine particle precursor
Yamada Y, Sagawa K, Nakashima S
Materials Science Forum, 433-4, 79, 2002
5 Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals
Klein O, Philip P, Sprekels J, Wilmanski K
Journal of Crystal Growth, 222(4), 832, 2001