1 |
Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing Liu BB, Qin FW, Wang DJ Applied Surface Science, 364, 769, 2016 |
2 |
DC characterization of 4H-SiC depletion mode MOS field effect transistor Zhao P, Rusli, Zhu CL, Wang H, Tin CC Solid-State Electronics, 50(3), 384, 2006 |
3 |
Structural defects in SiO2/SiC interface probed by a slow positron beam Maekawa M, Kawasuso A, Chen ZQ, Yoshikawa M, Suzuki R, Ohdaira T Applied Surface Science, 244(1-4), 322, 2005 |
4 |
Interface states at the SiO2/4H-SiC(0001) interface from first-principles: Effects of Si-Si bonds and of nitrogen atom termination Ohnuma T, Tsuchida H, Jikimoto T, Miyashita A, Yoshikawa M Materials Science Forum, 483, 573, 2005 |
5 |
The role of formation and dissolution of c clusters on the oxygen incorporation during dry thermal oxidation of 6H-SiC Radtke C, Baumvol IJR, Ferrera BC, Stedile FC Materials Science Forum, 483, 657, 2005 |
6 |
Interface states in abrupt SiO2/4H-and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters Ohnuma T, Tsuchida H, Jikimoto T Materials Science Forum, 457-460, 1297, 2004 |
7 |
Investigation of SiO2/SiC interface using positron annihilation technique Maekawa M, Kawasuso A, Yoshikawa M, Ichimiya A Materials Science Forum, 457-460, 1301, 2004 |
8 |
SiO2/SiC interface proved by positron annihilation Maekawa A, Kawasuso A, Yoshikawa A, Itoh H Applied Surface Science, 216(1-4), 365, 2003 |
9 |
Improvement of SiO2/alpha-SiC interface properties by nitrogen radical treatment Maeyama Y, Yano H, Hatayama T, Uraoka Y, Fuyuki T, Shirafuji T Materials Science Forum, 389-3, 997, 2002 |
10 |
Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry Tomioka Y, Iida T, Midorikawa M, Tukada H, Yoshimoto K, Hijikata Y, Yaguchi H, Yoshikawa M, Ishida Y, Kosugi R, Yoshida S Materials Science Forum, 389-3, 1029, 2002 |