화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
Liu BB, Qin FW, Wang DJ
Applied Surface Science, 364, 769, 2016
2 DC characterization of 4H-SiC depletion mode MOS field effect transistor
Zhao P, Rusli, Zhu CL, Wang H, Tin CC
Solid-State Electronics, 50(3), 384, 2006
3 Structural defects in SiO2/SiC interface probed by a slow positron beam
Maekawa M, Kawasuso A, Chen ZQ, Yoshikawa M, Suzuki R, Ohdaira T
Applied Surface Science, 244(1-4), 322, 2005
4 Interface states at the SiO2/4H-SiC(0001) interface from first-principles: Effects of Si-Si bonds and of nitrogen atom termination
Ohnuma T, Tsuchida H, Jikimoto T, Miyashita A, Yoshikawa M
Materials Science Forum, 483, 573, 2005
5 The role of formation and dissolution of c clusters on the oxygen incorporation during dry thermal oxidation of 6H-SiC
Radtke C, Baumvol IJR, Ferrera BC, Stedile FC
Materials Science Forum, 483, 657, 2005
6 Interface states in abrupt SiO2/4H-and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters
Ohnuma T, Tsuchida H, Jikimoto T
Materials Science Forum, 457-460, 1297, 2004
7 Investigation of SiO2/SiC interface using positron annihilation technique
Maekawa M, Kawasuso A, Yoshikawa M, Ichimiya A
Materials Science Forum, 457-460, 1301, 2004
8 SiO2/SiC interface proved by positron annihilation
Maekawa A, Kawasuso A, Yoshikawa A, Itoh H
Applied Surface Science, 216(1-4), 365, 2003
9 Improvement of SiO2/alpha-SiC interface properties by nitrogen radical treatment
Maeyama Y, Yano H, Hatayama T, Uraoka Y, Fuyuki T, Shirafuji T
Materials Science Forum, 389-3, 997, 2002
10 Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry
Tomioka Y, Iida T, Midorikawa M, Tukada H, Yoshimoto K, Hijikata Y, Yaguchi H, Yoshikawa M, Ishida Y, Kosugi R, Yoshida S
Materials Science Forum, 389-3, 1029, 2002