검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method Rost HJ, Menzel R, Siche D, Juda U, Kayser S, Kiessling FM, Sylla L, Richter T Journal of Crystal Growth, 500, 5, 2018 |
| 2 |
FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth Kachel K, Siche D, Golka S, Sennikov P, Bickermann M Materials Chemistry and Physics, 177, 12, 2016 |
| 3 |
PVT growth of GaN bulk crystals Siche D, Gogova D, Lehmann S, Fizia T, Fornari R, Andrasch M, Pipa A, Ehlbeck J Journal of Crystal Growth, 318(1), 406, 2011 |
| 4 |
Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ, Hageman PR Journal of Crystal Growth, 312(4), 595, 2010 |
| 5 |
Pseudohalide vapour growth of thick GaN layers Jacobs K, Siche D, Klimm D, Rost HJ, Gogova D Journal of Crystal Growth, 312(6), 750, 2010 |
| 6 |
Multi-analytical study of syntactic coalescence of polytypes in a 6H-SiC sample Agrosi G, Tempesta G, Capitani GC, Scandale E, Siche D Journal of Crystal Growth, 311(23-24), 4784, 2009 |
| 7 |
Growth of GaN crystals from chlorine-free gas phase Siche D, Rost HJ, Bottcher K, Gogova D, Fornari R Journal of Crystal Growth, 310(5), 916, 2008 |
| 8 |
Polarity- and orientation-related defect distribution in 4H-SiC single crystals Rost HJ, Schmidbauer M, Siche D, Fornari R Journal of Crystal Growth, 290(1), 137, 2006 |
| 9 |
Nearly stress-free substrates for GaN homoepitaxy Hermann M, Gogova D, Siche D, Schmidbauer M, Monemar B, Stutzmann M, Eickhoff M Journal of Crystal Growth, 293(2), 462, 2006 |
| 10 |
Effect of nitrogen doping on the formation of planar defects in 4H-SiC Siche D, Albrecht M, Doerschel J, Irmscher K, Rost RJ, Rossberg M, Schulz D Materials Science Forum, 483, 39, 2005 |