검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells Kaplar RJ, Kwon D, Ringel SA, Allerman AA, Kurtz SR, Jones ED, Sieg RM Solar Energy Materials and Solar Cells, 69(1), 85, 2001 |
| 2 |
Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates Sieg RM, Ringel SA, Ting SM, Samavedam SB, Currie M, Langdo T, Fitzgerald EA Journal of Vacuum Science & Technology B, 16(3), 1471, 1998 |
| 3 |
Improved Substrate-Temperature Stability During Molecular-Beam Epitaxy Growth Using Indium Free Mounting of Small Substrates of Various Shapes Sieg RM, Sacks RN, Grillot PN, Ringel SA Journal of Vacuum Science & Technology A, 14(6), 3283, 1996 |
| 4 |
Investigation of the Accuracy of Pyrometric Interferometry in Determining AlxGa1-xAs Growth-Rates and Compositions Sacks RN, Sieg RM, Ringel SA Journal of Vacuum Science & Technology B, 14(3), 2157, 1996 |