화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry
Boosalis A, Hofmann T, Sik J, Schubert M
Thin Solid Films, 519(9), 2604, 2011
2 OISF pattern and grown-in precipitates in heavily boron doped silicon
Valek L, Lysacek D, Sik J
Journal of the Electrochemical Society, 154(10), H904, 2007
3 Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study
Slugen V, Harmatha L, Tapaina M, Ballo P, Pisecny P, Sik J, Kogel G, Krsjak V
Applied Surface Science, 252(9), 3201, 2006