검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Impact of substrate material and annealing conditions on the microstructure and chemistry of yttria-stabilized-zirconia thin films Scherrer B, Rossi A, Martynczuk J, Rossell MD, Bieberle-Hutter A, Rupp JLM, Erni R, Gauckler LJ Journal of Power Sources, 196(18), 7372, 2011 |
| 2 |
An Improved Model for Boron Diffusion and Activation in Silicon Kwok CTM, Braatz RD, Paul S, Lerch W, Seebauer EG AIChE Journal, 56(2), 515, 2010 |
| 3 |
Reversibility of silicidation of Ta filaments in HWCVD of thin film silicon van der Werf CHM, Li H, Verlaan V, Oliphant CJ, Bakker R, Houweling ZS, Schropp REI Thin Solid Films, 517(12), 3431, 2009 |
| 4 |
Nitridation and oxynitridation of Si to control interfacial reaction with HfO2 Katarnreddy R, Inman R, Jursich G, Soulet A, Takoudis C Thin Solid Films, 516(23), 8498, 2008 |
| 5 |
A screen-printed interdigitated back contact cell using a boron-source diffusion barrier Hacke P, Gee JM Solar Energy Materials and Solar Cells, 88(1), 119, 2005 |
| 6 |
Boron-carbide barrier layers in scandium-silicon multilayers Jankowski AF, Saw CK, Walton CC, Hayes JP, Nilsen J Thin Solid Films, 469-470, 372, 2004 |
| 7 |
Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon Beyer W Solar Energy Materials and Solar Cells, 78(1-4), 235, 2003 |
| 8 |
Polycrystalline silicon prepared by metal induced crystallization Choi JH, Kim DY, Kim SS, Park SJ, Jang J Thin Solid Films, 440(1-2), 1, 2003 |
| 9 |
Solid-state graphitization mechanisms of silicon carbide 6H-SiC polar faces Forbeaux I, Themlin JM, Charrier A, Thibaudau F, Debever JM Applied Surface Science, 162, 406, 2000 |
| 10 |
Secondary defects engineering in c-Si: Influence of implantation dose, temperature, and oxygen concentration Poirier R, Schiettekatte F, Roorda S, Fortin MO Journal of Vacuum Science & Technology A, 18(2), 717, 2000 |