1 |
Uniform trench arrays with controllable tilted profiles using metal-assisted chemical etching Chen CY, Liu YR, Tseng JC, Hsu PY Applied Surface Science, 333, 152, 2015 |
2 |
SERS detection and antibacterial activity from uniform incorporation of Ag nanoparticles with aligned Si nanowires Chen CY, Hsu LJ, Hsiao PH, Yu CTR Applied Surface Science, 355, 197, 2015 |
3 |
Formation mechanism of Si(100) surface morphology in alkaline fluoride solutions Chu QM, Liu X, Zhang PX, Dai YNA Applied Surface Science, 257(22), 9503, 2011 |
4 |
Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO3 or KMnO4 Mogoda AS, Ahmad YH, Badawy WA Materials Chemistry and Physics, 126(3), 676, 2011 |
5 |
Model experiments on electrochemical formation of nano-dimensioned noble metal-oxide-semiconductor junctions at Si(111) surfaces Munoz AG, Lewerenz HJ Electrochimica Acta, 55(26), 7772, 2010 |
6 |
Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue Tsuda H, Mori M, Takao Y, Eriguchi K, Ono K Thin Solid Films, 518(13), 3475, 2010 |
7 |
High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates Wijesinghe TLSL, Li SQ, Breese MBH, Blackwood DJ Electrochimica Acta, 54(13), 3671, 2009 |
8 |
플라즈마 식각공정에서 발생하는 실리콘 게이트 전극의 Notching 현상 이원규 Journal of the Korean Industrial and Engineering Chemistry, 20(1), 99, 2009 |
9 |
Characterization of semiconductor nanostructures formed by using ultrathin Si oxide technology Ichikawa M, Uchida S, Shklyaev AA, Nakamura Y, Cho SP, Tanaka N Applied Surface Science, 255(3), 669, 2008 |
10 |
Surface termination and hydrogen bubble surfaces during anisotropic dissolution adhesion on Si(100) in aqueous KOH Haiss W, Raisch P, Bitsch L, Nichols RJ, Xia XH, Kelly JJ, Schiffrin DJ Journal of Electroanalytical Chemistry, 597(1), 1, 2006 |