| 1 |
Elucidating the mechanism of potential induced degradation delay effect by ultraviolet light irradiation for p-type crystalline silicon solar cells
Nguyen DC, Ishikawa Y, Jonai S, Nakamura K, Masuda A, Uraoka Y
Solar Energy, 199, 55, 2020 |
| 2 |
Silicon nitride as anode material for Li-ion batteries: Understanding the SiNx conversion reaction
Ulvestad A, Mxhlen JP, Kirkengen M
Journal of Power Sources, 399, 414, 2018 |
| 3 |
반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교
김재은, 이경동, 강윤묵, 이해석, 김동환
Korean Journal of Materials Research, 26(1), 47, 2016 |
| 4 |
Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning
Chen CN, Huang JJ
Thin Solid Films, 529, 449, 2013 |
| 5 |
Study for amorphous silicon etching process using dielectric barrier discharge
Seok DC, Lho T, Yoo SR, Hong YC, Lee BJ
Thin Solid Films, 519(20), 6858, 2011 |
| 6 |
Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3
Park K, Yun WD, Choi BJ, Kim HD, Lee WJ, Rha SK, Park CO
Thin Solid Films, 517(14), 3975, 2009 |
| 7 |
SiNx 박막을 이용한 Si Nanodot의 형성
이장우, 박익현, 신별, 정지원
Journal of the Korean Industrial and Engineering Chemistry, 16(6), 768, 2005 |
| 8 |
Application of spectral and temporal weighted error functions for data analysis in real-time spectroscopic ellipsometry
Zapien JA, Ferlauto AS, Collins RW
Thin Solid Films, 455-56, 106, 2004 |
| 9 |
Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application
Morimoto R, Yokomori C, Kikkawa A, Izumi A, Matsumura H
Thin Solid Films, 430(1-2), 230, 2003 |
