화학공학소재연구정보센터
검색결과 : 30건
No. Article
1 Coupling of a bimetallic strip heat engine with a piezoelectric transducer for thermal energy harvesting
Boughaleb J, Arnaud A, Monfray S, Cottinet PJ, Quenard S, Boeuf F, Guyomar D, Skotnicki T
Molecular Crystals and Liquid Crystals, 628(1), 15, 2016
2 UTBB FDSOI: Evolution and opportunities
Monfray S, Skotnicki T
Solid-State Electronics, 125, 63, 2016
3 Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F
Solid-State Electronics, 88, 15, 2013
4 Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances
Ben Akkez I, Fenouillet-Beranger C, Cros A, Perreau P, Haendler S, Weber O, Andrieu F, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gouraud P, Margain A, Borowiak C, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Balestra F, Ghibaudo G, Boeuf F
Solid-State Electronics, 90, 143, 2013
5 Comparative study of circuit perspectives for multi-gate structures at sub-10 nm node
Lacord J, Huguenin JL, Monfray S, Coquand R, Skotnicki T, Ghibaudo G, Boeuf F
Solid-State Electronics, 74, 25, 2012
6 Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, de Buttet C, Abbate F, Campidelli Y, Pinzelli L, Gouraud P, Margain A, Peru S, Bourdelle KK, Nguyen BY, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F
Solid-State Electronics, 74, 32, 2012
7 Thin-film devices for low power applications
Monfra S, Fenouillet-Beranger C, Bidal G, Boeuf F, Denorme S, Huguenin JL, Samson MP, Loubet N, Hartmann JM, Campidelli Y, Destefanis V, Arvet C, Benotmane K, Clement L, Faynot O, Skotnicki T
Solid-State Electronics, 54(2), 90, 2010
8 Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs
Pham-Nguyen L, Fenouillet-Beranger C, Ghibaudo G, Skotnicki T, Cristoloveanu S
Solid-State Electronics, 54(2), 123, 2010
9 Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
Fenouillet-Beranger C, Perreau P, Denorme S, Tosti L, Andrieu F, Weber O, Monfray S, Barnola S, Arvet C, Campidelli Y, Haendler S, Beneyton R, Perrot C, de Buttet C, Gros P, Pham-Nguyen L, Leverd F, Gouraud P, Abbate F, Baron F, Torres A, Laviron C, Pinzelli L, Vetier J, Borowiak C, Margain A, Delprat D, Boedt F, Bourdelle K, Nguyen BY, Faynot O, Skotnicki T
Solid-State Electronics, 54(9), 849, 2010
10 Gate-all-around technology: Taking advantage of ballistic transport?
Huguenin JL, Bidal G, Denorme S, Fleury D, Loubet N, Pouydebasque A, Perreau P, Leverd F, Barnola S, Beneyton R, Orlando B, Gouraud P, Salvetat T, Clement L, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 54(9), 883, 2010