검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications Grandusky JR, Smart JA, Mendrick MC, Schowalter LJ, Chen KX, Schubert EF Journal of Crystal Growth, 311(10), 2864, 2009 |
| 2 |
Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication Schujman SB, Schowalter LJ, Bondokov RT, Morgan KE, Liu W, Smart JA, Bettles T Journal of Crystal Growth, 310(5), 887, 2008 |
| 3 |
Large-area AlN substrates for electronic applications: An industrial perspective Bondokov RT, Mueller SG, Morgan KE, Slack GA, Schujman S, Wood MC, Smart JA, Schowalter LJ Journal of Crystal Growth, 310(17), 4020, 2008 |
| 4 |
Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer Xi YA, Chen KX, Mont F, Kim JK, Schubert EF, Liu W, Li X, Smart JA Journal of Crystal Growth, 299(1), 59, 2007 |
| 5 |
Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability Green DS, Gibb SR, Hosse B, Vetury R, Grider DE, Smart JA Journal of Crystal Growth, 272(1-4), 285, 2004 |
| 6 |
Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors Kaiser S, Jakob M, Zweck J, Gebhardt W, Ambacher O, Dimitrov R, Schremer AT, Smart JA, Shealy JR Journal of Vacuum Science & Technology B, 18(2), 733, 2000 |