검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires Kierdaszuk J, Tokarczyk M, Czajkowski KM, Bozek R, Krajewska A, Przewloka A, Kaszub W, Sobanska M, Zytkiewicz ZR, Kowalski G, Antosiewicz TJ, Kaminska M, Wysmolek A, Drabinska A Applied Surface Science, 475, 559, 2019 |
| 2 |
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface Janicki L, Gladysiewicz M, Misiewicz J, Klosek K, Sobanska M, Kempisty P, Zytkiewicz ZR, Kudrawiec R Applied Surface Science, 396, 1657, 2017 |
| 3 |
Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer Wierzbicka A, Tchutchulashvili G, Sobanska M, Klosek K, Minikayev R, Domagala JZ, Borysiuk J, Zytkiewicz ZR Applied Surface Science, 425, 1014, 2017 |
| 4 |
Modelling of X-ray diffraction curves for GaN nanowires on Si(111) Kladko VP, Kuchuk AV, Stanchu HV, Safriuk NV, Belyaev AE, Wierzbicka A, Sobanska M, Klosek K, Zytkiewicz ZR Journal of Crystal Growth, 401, 347, 2014 |
| 5 |
Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy Borysiuk J, Sobczak K, Wierzbicka A, Jezierska E, Klosek K, Sobanska M, Zytkiewicz ZR, Lucznik B Journal of Crystal Growth, 401, 355, 2014 |
| 6 |
Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers Sobanska M, Wierzbicka A, Klosek K, Borysiuk J, Tchutchulashvili G, Gieraltowska S, Zytkiewicz ZR Journal of Crystal Growth, 401, 657, 2014 |
| 7 |
Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy Klosek K, Sobanska M, Tchutchulashvili G, Zytkiewicz ZR, Teisseyre H, Klopotowski L Thin Solid Films, 534, 107, 2013 |