| 1 |
Revisited approach for the characterization of Gate Induced Drain Leakage
Rafhay Q, Xu CQ, Batude P, Mouis M, Vinet M, Ghibaudo G
Solid-State Electronics, 71, 37, 2012 |
| 2 |
Effects of dose on activation characteristics of P in Ge
Anisuzzaman M, Sadoh T
Thin Solid Films, 520(8), 3255, 2012 |
| 3 |
Susceptor-assisted microwave annealing for activation of arsenic dopants in silicon
Alford TL, Gadre MJ, Vemuri RNP, Theodore ND
Thin Solid Films, 520(13), 4314, 2012 |
| 4 |
Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method
Chang KM, Lin JH, Sun CY
Applied Surface Science, 254(19), 6151, 2008 |
| 5 |
Characterization of the low temperature activated N+/P junction formed by implant into silicide method
Chang KM, Lin JH, Yang CH
Applied Surface Science, 254(19), 6155, 2008 |
| 6 |
Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon
Tan CF, Chor EF, Lee H, Liu J, Quek E, Chan L
Thin Solid Films, 504(1-2), 132, 2006 |
| 7 |
Effects of crystalline regrowth on dopant profiles in prearnorphized silicon
Hopstaken MJP, Tamminga Y, Verheijen MA, Duffy R, Venezia VC, Heringa A
Applied Surface Science, 231-2, 688, 2004 |
| 8 |
Effects of stress on solid-phase epitaxial regrowth and corner defect generation in As+-implanted, two-dimensional amorphized Si
Shin YG, Lee JY, Park MH, Kang HK
Journal of Crystal Growth, 231(1-2), 107, 2001 |
