화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-mu m femtosecond laser excitation
Sadia CP, Lopez LP, delos Santos RM, Muldera JE, De Los Reyes AE, Tumanguil MAC, Que CT, Mag-Usara VK, Tani M, Somintac AS, Estacio ES, Salvador AA
Thin Solid Films, 648, 46, 2018
2 Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields
Jaculbia RB, Balgos MHM, Mangila NS, Tumanguil MAC, Estacio ES, Salvador AA, Somintac AS
Applied Surface Science, 303, 241, 2014
3 Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs-AlGaAs core-shell nanowires grown on a pre-patterned Si (111) substrate
Bailon-Somintac MF, Ibanez JJ, Jaculbia RB, Loberternos RA, Defensor MJ, Salvador AA, Somintac AS
Journal of Crystal Growth, 314(1), 268, 2011
4 Role of excited nitrogen species in the growth of GaN by RF-MBE
Kikuchi T, Somintac AS, Ariyada O, Wada M, Ohachi T
Journal of Crystal Growth, 292(2), 221, 2006