검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect Zhou YS, Hinchet R, Yang Y, Ardila G, Songmuang R, Zhang F, Zhang Y, Han WH, Pradel K, Montes L, Mouis M, Wang ZL Advanced Materials, 25(6), 883, 2013 |
| 2 |
Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111) Le TTG, Bougerol C, Mariette H, Songmuang R Journal of Crystal Growth, 364, 118, 2013 |
| 3 |
Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems Costantini G, Rastelli A, Manzano C, Acosta-Diaz P, Katsaros G, Songmuang R, Schmidt OG, Von Kanel H, Kern K Journal of Crystal Growth, 278(1-4), 38, 2005 |
| 4 |
Shape evolution of InAs quantum dots during overgrowth Songmuang R, Kiravittaya S, Schmidt OG Journal of Crystal Growth, 249(3-4), 416, 2003 |
| 5 |
Photoluminescence investigation of low-temperature, capped self-assembled InAs/GaAs quantum-dots Songmuang R, Kiravittaya S, Sawadsaringkarn M, Panyakeow S, Schmidt OG Journal of Crystal Growth, 251(1-4), 166, 2003 |
| 6 |
Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching Kiravittaya S, Songmuang R, Jin-Phillipp NY, Panyakeow S, Schmidt OG Journal of Crystal Growth, 251(1-4), 258, 2003 |
| 7 |
InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy Kiravittaya S, Songmuang R, Changmuang P, Sopitpan S, Ratanathammaphan S, Sawadsaringkarn M, Panyakeow S Journal of Crystal Growth, 227, 1010, 2001 |
| 8 |
Selective growth of InAs/GaAs self-organized quantum dots by shadow mask technique Songmuang R, Kiravittaya S, Thainoi S, Changmuang P, Sopitpan S, Ratanathammaphan S, Sawadsaringkarn M, Panyakeow S Journal of Crystal Growth, 227, 1053, 2001 |