검색결과 : 16건
No. | Article |
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1 |
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition Lamperti A, Molle A, Cianci E, Wiemer C, Spiga S, Fanciulli M Thin Solid Films, 563, 44, 2014 |
2 |
Preface to E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices Spiga S, Muller C, Cowburn R, Riel H, Siegel J Thin Solid Films, 533, V, 2013 |
3 |
Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory Congedo G, Wiemer C, Lamperti A, Cianci E, Molle A, Volpe FG, Spiga S Thin Solid Films, 533, 9, 2013 |
4 |
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As Lamagna L, Molle A, Wiemer C, Spiga S, Grazianetti C, Congedo G, Fanciulli M Journal of the Electrochemical Society, 159(3), H220, 2012 |
5 |
Cubic/Tetragonal Phase Stabilization in High-kappa ZrO2 Thin Films Grown Using O-3-Based Atomic Layer Deposition Lamperti A, Lamagna L, Congedo G, Spiga S Journal of the Electrochemical Society, 158(10), G221, 2011 |
6 |
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer Muller C, Deleruyelle D, Muller R, Thomas M, Demolliens A, Turquat C, Spiga S Solid-State Electronics, 56(1), 168, 2011 |
7 |
Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories Nardi F, Ielmini D, Cagli C, Spiga S, Fanciulli M, Goux L, Wouters DJ Solid-State Electronics, 58(1), 42, 2011 |
8 |
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes Dumas C, Deleruyelle D, Demolliens A, Muller C, Spiga S, Cianci E, Fanciulli M, Tortorelli I, Bez R Thin Solid Films, 519(11), 3798, 2011 |
9 |
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors Molle A, Baldovino S, Spiga S, Fanciulli M Thin Solid Films, 518, S96, 2010 |
10 |
Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks Molle A, Lamagna L, Spiga S, Fanciulli M, Brammertz G, Meuris M Thin Solid Films, 518, S123, 2010 |