검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide Standaert TEFM, Hedlund C, Joseph EA, Oehrlein GS, Dalton TJ Journal of Vacuum Science & Technology A, 22(1), 53, 2004 |
| 2 |
High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether) Standaert TEFM, Matsuo PJ, Li X, Oehrlein GS, Lu TM, Gutmann R, Rosenmayer CT, Bartz JW, Langan JG, Entley WR Journal of Vacuum Science & Technology A, 19(2), 435, 2001 |
| 3 |
Etching of xerogel in high-density fluorocarbon plasmas Standaert TEFM, Joseph EA, Oehrlein GS, Jain A, Gill WN, Wayner PC, Plawsky JL Journal of Vacuum Science & Technology A, 18(6), 2742, 2000 |
| 4 |
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism Schaepkens M, Standaert TEFM, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 17(1), 26, 1999 |
| 5 |
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2 Standaert TEFM, Matsuo PJ, Allen SD, Oehrlein GS, Dalton TJ Journal of Vacuum Science & Technology A, 17(3), 741, 1999 |
| 6 |
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor Rueger NR, Doemling MF, Schaepkens M, Beulens JJ, Standaert TEFM, Oehrlein GS Journal of Vacuum Science & Technology A, 17(5), 2492, 1999 |
| 7 |
Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing Schaepkens M, Rueger NR, Beulens JJ, Li X, Standaert TEFM, Matsuo PJ, Oehrlein GS Journal of Vacuum Science & Technology A, 17(6), 3272, 1999 |
| 8 |
Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch Matsuo PJ, Standaert TEFM, Allen SD, Oehrlein GS, Dalton TJ Journal of Vacuum Science & Technology B, 17(4), 1435, 1999 |
| 9 |
High density fluorocarbon etching of silicon in an inductively coupled plasma : Mechanism of etching through a thick steady state fluorocarbon layer Standaert TEFM, Schaepkens M, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 16(1), 239, 1998 |
| 10 |
Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas Schaepkens M, Bosch RCM, Standaert TEFM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 16(4), 2099, 1998 |