검색결과 : 13건
No. | Article |
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1 |
Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells Ramiro I, Antolin E, Marti A, Farmer CD, Stanley CR, Luque A Solar Energy Materials and Solar Cells, 140, 299, 2015 |
2 |
Extreme voltage recovery in GaAs:Ti intermediate band solar cells Linares PG, Marti A, Antolin E, Ramiro I, Lopez E, Hernandez E, Marron DF, Artacho I, Tobias I, Gerard P, Chaix C, Campion RP, Foxon CT, Stanley CR, Molina SI, Luque A Solar Energy Materials and Solar Cells, 108, 175, 2013 |
3 |
Voltage recovery in intermediate band solar cells Linares PG, Marti A, Antolin E, Farmer CD, Ramiro I, Stanley CR, Luque A Solar Energy Materials and Solar Cells, 98, 240, 2012 |
4 |
Elements of the design and analysis band solar of quantum-dot intermediate cells Marti A, Antolin E, Canovas E, Lopez N, Linares PG, Luque A, Stanley CR, Farmer CD Thin Solid Films, 516(20), 6716, 2008 |
5 |
Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell Antolin E, Marti A, Stanley CR, Fanner CD, Canovas E, Lopez N, Linares PG, Luque A Thin Solid Films, 516(20), 6919, 2008 |
6 |
Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells Canovas E, Marti A, Lopez N, Antolin E, Linares PG, Farmer CD, Stanley CR, Luque A Thin Solid Films, 516(20), 6943, 2008 |
7 |
Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors Holland M, Stanley CR, Reid W, Hill RJW, Moran DAJ, Thayne I, Paterson GW, Long AR Journal of Vacuum Science & Technology B, 25(5), 1706, 2007 |
8 |
GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors Holland M, Stanley CR, Reid W, Thayne I, Paterson GW, Long AR, Longo P, Scott J, Craven AJ, Gregory R Journal of Vacuum Science & Technology B, 25(3), 1024, 2007 |
9 |
Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors Macintyre DS, Chen Y, Gourlay D, Boyd E, Moran D, Cao X, Elgaid K, Stanley CR, Thayne I, Thoms S Journal of Vacuum Science & Technology B, 21(6), 2783, 2003 |
10 |
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack Chen Y, Macintyre DS, Cao X, Boyd E, Moran D, McLelland H, Holland M, Stanley CR, Thayne I, Thoms S Journal of Vacuum Science & Technology B, 21(6), 3012, 2003 |