화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Homoepitaxial growth of HVPE-GaN doped with Si
Iwinska M, Sochacki T, Amilusik M, Kempisty P, Lucznik B, Fijalkowski M, Litwin-Staszewska E, Smalc-Koziorowska J, Khapuridze A, Staszczak G, Grzegory I, Bockowski M
Journal of Crystal Growth, 456, 91, 2016
2 The importance of structural inhomogeneity in GaN thin films
Liliental-Weber Z, dos Reis R, Weyher JL, Staszczak G, Jakiela R
Journal of Crystal Growth, 456, 160, 2016
3 Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange
Weyher JL, Sochacki T, Amilusik M, Fijalkowski M, Lucznik B, Jakiela R, Staszczak G, Nikolenko A, Strelchuk V, Sadovyi B, Bockowski M, Grzegory I
Journal of Crystal Growth, 403, 77, 2014