검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Analysis of crystal orientation in AIN layers grown on m-plane sapphire Mogilatenko A, Kirmse H, Stellmach J, Frentrup M, Mehnke E, Wernicke T, Kneissl M, Weyers M Journal of Crystal Growth, 400, 54, 2014 |
| 2 |
Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy Stellmach J, Mehnke F, Frentrup M, Reich C, Schlegel J, Pristovsek M, Wernicke T, Kneissl M Journal of Crystal Growth, 367, 42, 2013 |
| 3 |
Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Pristovsek M, Kadir A, Meissner C, Schwaner T, Leyer M, Stellmach J, Kneissl M, Ivaldi F, Kret S Journal of Crystal Growth, 372, 65, 2013 |
| 4 |
MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire Stellmach J, Frentrup M, Mehnke F, Pristovsek M, Wernicke T, Kneissl M Journal of Crystal Growth, 355(1), 59, 2012 |
| 5 |
High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor Stellmach J, Pristovsek M, Savas O, Schlegel J, Yakovlev EV, Kneissl M Journal of Crystal Growth, 315(1), 229, 2011 |
| 6 |
Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy Ploch S, Park JB, Stellmach J, Schwaner T, Frentrup M, Niermann T, Wernicke T, Pristovsek M, Lehmann M, Kneissl M Journal of Crystal Growth, 331(1), 25, 2011 |
| 7 |
Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source Kremzow R, Pristovsek M, Stellmach J, Savas O, Kneissl M Journal of Crystal Growth, 312(12-13), 1983, 2010 |
| 8 |
The critical thickness of InGaN on (0001)GaN Leyer M, Stellmach J, Meissner C, Pristovsek M, Kneissl M Journal of Crystal Growth, 310(23), 4913, 2008 |