화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Selective epitaxial growth of SiGe : C for high speed HBTs
Schafer H, Bock J, Stengl R, Knapp H, Aufinger K, Wurzer M, Boguth S, Rest M, Schreiter R, Meister TF
Applied Surface Science, 224(1-4), 18, 2004
2 Secondary ion mass spectrometry of deep trench capacitors in dynamic random access memory
Parks CC, Glawischnig H, Levy M, Stengl R, Dieseldorff C
Journal of Vacuum Science & Technology A, 17(4), 1130, 1999