화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy
Beresford R, Stevens KS, Schwartzman AF
Journal of Vacuum Science & Technology B, 16(3), 1293, 1998
2 Influence of Substrate Electrical Bias on the Growth of GaN in Plasma-Assisted Epitaxy
Beresford R, Ohtani A, Stevens KS, Kinniburgh M
Journal of Vacuum Science & Technology B, 13(2), 792, 1995
3 Growth of Group-III Nitrides on Si(111) by Plasma-Assisted Molecular-Beam Epitaxy
Stevens KS, Ohtani A, Schwartzman AF, Beresford R
Journal of Vacuum Science & Technology B, 12(2), 1186, 1994