| 1 |
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Zikova M, Hospodkova A, Pangrac J, Oswald J, Hulicius E
Journal of Crystal Growth, 464, 59, 2017 |
| 2 |
Growth and properties of A(III)B(V) QD structures for intermediate band solar cells
Vyskocil J, Gladkov P, Petricek O, Hospodkova A, Pangrac J
Journal of Crystal Growth, 414, 172, 2015 |
| 3 |
Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells
Kong LM, Sun W, Feng ZC, Xie S, Zhou YQ, Wang R, Zhang CX, Zong ZC, Wang HX, Qiao Q, Wu ZY
Thin Solid Films, 562, 440, 2014 |
| 4 |
Capping InAs quantum dots with an InGaAsSb strain-reducing layer to improve optical properties and dot-size uniformity
Liu WS, Chang CM
Thin Solid Films, 570, 490, 2014 |
| 5 |
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Hospodkova A, Zikova M, Pangrac J, Oswald J, Kuldova K, Vyskocil J, Hulicius E
Journal of Crystal Growth, 370, 303, 2013 |
| 6 |
Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer
Huang LR, Tian P, Yu Y, Huang DX
Thin Solid Films, 518(18), 5278, 2010 |
