| 1 |
Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering
Kusayanagi M, Uchida A, Oka N, Jia J, Nakamura S, Shigesato Y
Thin Solid Films, 555, 93, 2014 |
| 2 |
Current topics of silicon germanium devices
Kasper E
Applied Surface Science, 254(19), 6158, 2008 |
| 3 |
Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55 mu m
Abedi K, Ahmadi V, Darabi E, Farshi MKM, Sheikhi MH
Solid-State Electronics, 52(2), 312, 2008 |
| 4 |
Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer
Kim JS, Lee JH, Hong SU, Han WS, Kwack HS, Lee CW, Oh DK
Journal of Crystal Growth, 259(3), 252, 2003 |
| 5 |
TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
Patriarche G, Glas F, Le Roux G, Largeau L, Mereuta A, Ougazzaden A, Benchimol JL
Journal of Crystal Growth, 221, 12, 2000 |
| 6 |
High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
Lane B, Razeghi M
Journal of Crystal Growth, 221, 679, 2000 |
| 7 |
An equilibrium model for buried SiGe strained layers
Fischer A, Osten HJ, Richter H
Solid-State Electronics, 44(5), 869, 2000 |
| 8 |
Spectroscopic ellipsometry of SixGe1-x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry
Ferrieu F, Ribot P, Regolini JL
Thin Solid Films, 373(1-2), 211, 2000 |
| 9 |
Self-organized Ge quantum wires on Si(111) substrates
Jin G, Tang YS, Liu JL, Wang KL
Journal of Vacuum Science & Technology A, 17(4), 1406, 1999 |
| 10 |
Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy
Yu ET, Zuo SL, Bi WG, Tu CW, Allerman AA, Biefeld RM
Journal of Vacuum Science & Technology A, 17(4), 2246, 1999 |
