화학공학소재연구정보센터
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No. Article
1 폴리우레탄 아크릴레이트 수지를 이용한 부분 경화 표면에서의 나노크기 주름
김정수, 최세진, 서동철
Polymer(Korea), 43(6), 926, 2019
2 Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs
Suh DC, Cho YD, Ko DH, Lee Y, Chung KB, Cho MH
Electrochemical and Solid State Letters, 14(2), H63, 2011
3 The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces
Suh DC, Cho YD, Lee Y, Ko DH, Chung KB, Cho MH
Electrochemical and Solid State Letters, 12(10), H376, 2009
4 Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3)(2)(C2H5](4) and SiH[N(CH3)(2)](3) precursors via an H2O oxidant
Chung KB, Cho MH, Moon DW, Suh DC, Ko DH, Hwang U, Kang HJ
Electrochemical and Solid State Letters, 10(1), G1, 2007
5 Plasmid vectors harboring cellular promoters can induce prolonged gene expression in hematopoietic and mesenchymal progenitor cells
Byun HM, Suh DC, Jeong YS, Wee HS, Kim JM, Kim WK, Ko JJ, Kim JS, Lee YB, Oh YK
Biochemical and Biophysical Research Communications, 332(2), 518, 2005
6 Interaction of Delta-(Ru(Phen)(2)Dppz)(2+) and Lambda-(Ru(Phen)(2)Dppz)(2+) with DNA - A Calorimetric and Equilibrium Binding Study
Haq I, Lincoln P, Suh DC, Norden B, Chowdhry BZ, Chaires JB
Journal of the American Chemical Society, 117(17), 4788, 1995