화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy
Svensson SP, Sarney WL, Yu KM, Ting M, Calley WL, Novikov SV, Foxon CT, Walukiewicz W
Journal of Crystal Growth, 425, 2, 2015
2 Growth temperature and surfactant effects on the properties of mixed group V alloys
Svensson SP, Sarney WL, Connelly BC, Anderson EM, Millunchick JM
Journal of Crystal Growth, 425, 234, 2015
3 Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys
Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Ting M, Foxon CT
Journal of Crystal Growth, 425, 255, 2015
4 AlInAsSb for M-LWIR detectors
Sarney WL, Svensson SP, Wang D, Donetsky D, Kipshidze G, Shterengas L, Lin Y, Belenky G
Journal of Crystal Growth, 425, 357, 2015
5 Composition modulated InAsSb superlattice induced by non-incorporating Bismuth
Sarney WL, Svensson SP
Journal of Crystal Growth, 432, 105, 2015
6 Tellurium n-type doping of highly mismatched amorphous GaNi1-xAsx alloys in plasma-assisted molecular beam epitaxy
Novikov SV, Ting M, Yu KM, Sarney WL, Martin RW, Svensson SP, Walukiewicz W, Foxon CT
Journal of Crystal Growth, 404, 9, 2014
7 The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants
Sarney WL, Svensson SP, Anderson EM, Lundquist AM, Pearson C, Millunchick JM
Journal of Crystal Growth, 406, 8, 2014
8 GaN1-xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions
Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Foxon CT
Journal of Crystal Growth, 383, 95, 2013
9 Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
Svensson SP, Donetsky D, Wang D, Hier H, Crowne FJ, Belenky G
Journal of Crystal Growth, 334(1), 103, 2011
10 Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials
Wang D, Svensson SP, Shterengas L, Belenky G
Journal of Crystal Growth, 312(19), 2705, 2010