화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Growth and characterization of GaN-based structures on SiCOI-engineered substrates
Dikme Y, van Gemmern P, Lin YC, Szymakowski A, Kalisch H, Faure B, Richtarch C, Larheche H, Bove P, Letertre F, Woitok JF, Efthimiadis K, Jansen RH, Heuken M
Journal of Crystal Growth, 272(1-4), 500, 2004
2 Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)
Dikme Y, Gerstenbrandt G, Alam A, Kalisch H, Szymakowski A, Fieger M, Jansen RH, Heuken M
Journal of Crystal Growth, 248, 578, 2003
3 MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor
Giesen C, Szymakowski A, Rushworth S, Heuken M, Heime K
Journal of Crystal Growth, 221, 450, 2000