| 1 |
Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP
Campi R, Codato S, Soldani D
Journal of Crystal Growth, 265(3-4), 357, 2004 |
| 2 |
X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources
Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM
Journal of Crystal Growth, 248, 139, 2003 |
| 3 |
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors
Moto A, Tanaka S, Tanabe T, Takagishi S
Solar Energy Materials and Solar Cells, 66(1-4), 585, 2001 |
| 4 |
The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP
Gerhardt M, Kirpal G, Schwabe R, Benndorf G, Gottschalch V
Thin Solid Films, 392(1), 85, 2001 |
| 5 |
InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
Velling P, Agethen M, Prost W, Tegude FJ
Journal of Crystal Growth, 221, 722, 2000 |
