| 1 |
Preparation of high laser-induced damage threshold Ta2O5 films
Xu C, Yi P, Fan HL, Qi JW, Yang S, Qiang YH, Liu JT, Li DW
Applied Surface Science, 309, 194, 2014 |
| 2 |
High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films
Xu C, Xiao QL, Maa JY, Jin YX, Shao JD, Fan ZX
Applied Surface Science, 254(20), 6554, 2008 |
| 3 |
Synthesis and characterization of polyvinylpyrrolidine assisted tantalum pentoxide films
Subramanian V, Ndiege N, Seebauer EG, Shannon MA, Masel RI
Thin Solid Films, 516(15), 4784, 2008 |
| 4 |
Electrical characterization of deposited and oxidized Ta2Si as dielectric film for SiC metal-insulator-semiconductor structures.
Perez A, Tournier D, Montserrat J, Mestres N, Sandiumenge F, Millan J
Materials Science Forum, 457-460, 845, 2004 |
| 5 |
Leakage current mechanism of metal-Ta2O5-metal capacitors for memory device applications
Lai BCM, Lee JYM
Journal of the Electrochemical Society, 146(1), 266, 1999 |
| 6 |
Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100)
Mao AY, Son KA, White JM, Kwong DL, Roberts DA, Vrtis RN
Journal of Vacuum Science & Technology A, 17(3), 954, 1999 |
| 7 |
Dry oxidation resistance of ultrathin nitride films: Ordered and amorphous silicon nitride on Si(111)
Wallace RM, Wei Y
Journal of Vacuum Science & Technology B, 17(3), 970, 1999 |
| 8 |
Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N-2, O-2 and N2O
Choi WK, Tan LS, Lim JY, Pek SG
Thin Solid Films, 343-344, 105, 1999 |
| 9 |
Influence of the forming electrolyte on the electrical properties of tantalum and niobium oxide films: an EIS comparative study
Cavigliasso GE, Esplandiu MJ, Macagno VA
Journal of Applied Electrochemistry, 28(11), 1213, 1998 |
| 10 |
Discrete beta-Ta2O5 crystallite formation in reactively sputtered amorphous thin films
Beckage PJ, Knorr DB, Wu XM, Lu TM, Rymaszewski EJ
Journal of Materials Science, 33(17), 4375, 1998 |
