검색결과 : 6건
No. | Article |
---|---|
1 |
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers Czernecki R, Grzanka E, Strak P, Targowski G, Krukowski S, Perlin P, Suski T, Leszczynski M Journal of Crystal Growth, 464, 123, 2017 |
2 |
Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells Czernecki R, Grzanka E, Smalc-Koziorowska J, Grzanka S, Schiavon D, Targowski G, Plesiewicz J, Prystawko P, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 414, 38, 2015 |
3 |
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers Czernecki R, Kret S, Kempisty P, Grzanka E, Plesiewicz J, Targowski G, Grzanka S, Bilska M, Smalc-Koziorowska J, Krukowski S, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 402, 330, 2014 |
4 |
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy Leszczynski M, Czernecki R, Krukowski S, Krysko M, Targowski G, Prystawko P, Plesiewicz J, Perlin P, Suski T Journal of Crystal Growth, 318(1), 496, 2011 |
5 |
Selective etching of dislocations in violet-laser diode structures Kamler G, Smalc J, Wozniak M, Weyher JL, Czernecki R, Targowski G, Leszczynski M, Grzegory I, Porowski S Journal of Crystal Growth, 293(1), 18, 2006 |
6 |
High-power laser structures grown on bulk GaN crystals Prystawko P, Czernetzki R, Gorczyca L, Targowski G, Wisniewski P, Perlin P, Zielinski M, Suski T, Leszczynski M, Grzegory I, Porowski S Journal of Crystal Growth, 272(1-4), 274, 2004 |