화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers
Czernecki R, Grzanka E, Strak P, Targowski G, Krukowski S, Perlin P, Suski T, Leszczynski M
Journal of Crystal Growth, 464, 123, 2017
2 Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells
Czernecki R, Grzanka E, Smalc-Koziorowska J, Grzanka S, Schiavon D, Targowski G, Plesiewicz J, Prystawko P, Suski T, Perlin P, Leszczynski M
Journal of Crystal Growth, 414, 38, 2015
3 Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
Czernecki R, Kret S, Kempisty P, Grzanka E, Plesiewicz J, Targowski G, Grzanka S, Bilska M, Smalc-Koziorowska J, Krukowski S, Suski T, Perlin P, Leszczynski M
Journal of Crystal Growth, 402, 330, 2014
4 Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
Leszczynski M, Czernecki R, Krukowski S, Krysko M, Targowski G, Prystawko P, Plesiewicz J, Perlin P, Suski T
Journal of Crystal Growth, 318(1), 496, 2011
5 Selective etching of dislocations in violet-laser diode structures
Kamler G, Smalc J, Wozniak M, Weyher JL, Czernecki R, Targowski G, Leszczynski M, Grzegory I, Porowski S
Journal of Crystal Growth, 293(1), 18, 2006
6 High-power laser structures grown on bulk GaN crystals
Prystawko P, Czernetzki R, Gorczyca L, Targowski G, Wisniewski P, Perlin P, Zielinski M, Suski T, Leszczynski M, Grzegory I, Porowski S
Journal of Crystal Growth, 272(1-4), 274, 2004