검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD Kelekci O, Tasli P, Cetin SS, Kasap M, Ozcelik S, Ozbay E Current Applied Physics, 12(6), 1600, 2012 |
| 2 |
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers Yildiz A, Lisesivdin SB, Tasli P, Ozbay E, Kasap M Current Applied Physics, 10(3), 838, 2010 |
| 3 |
Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier Lisesivdin SB, Tasli P, Kasap M, Ozturk M, Arslan E, Ozcelik S, Ozbay E Thin Solid Films, 518(19), 5572, 2010 |