화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Dissociation of As-4 molecules during molecular beam epitaxy of GaAsP on (n11)A and (n11)B GaAs substrates
Tatsuoka Y, Uemura M, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 20(1), 282, 2002
2 Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate
Tatsuoka Y, Uemura M, Kitada T, Shimomura S, Hiyamizu S
Journal of Crystal Growth, 227, 266, 2001
3 Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy
Tatsuoka Y, Kamimoto H, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 18(3), 1549, 2000
4 In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
Kamimoto H, Tatsuoka Y, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 18(3), 1572, 2000
5 As-4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates
Kitada T, Tatsuoka Y, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 18(3), 1579, 2000
6 Strained InGaAs AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy
Shimomura S, Ohta K, Tatsuoka Y, Hiyamizu S, Fujita K, Egami N
Journal of Vacuum Science & Technology B, 17(3), 1127, 1999
7 GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
Tatsuoka Y, Kamimoto H, Kitano Y, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 17(3), 1155, 1999