검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer Wierzbicka A, Tchutchulashvili G, Sobanska M, Klosek K, Minikayev R, Domagala JZ, Borysiuk J, Zytkiewicz ZR Applied Surface Science, 425, 1014, 2017 |
| 2 |
Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers Sobanska M, Wierzbicka A, Klosek K, Borysiuk J, Tchutchulashvili G, Gieraltowska S, Zytkiewicz ZR Journal of Crystal Growth, 401, 657, 2014 |
| 3 |
Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy Klosek K, Sobanska M, Tchutchulashvili G, Zytkiewicz ZR, Teisseyre H, Klopotowski L Thin Solid Films, 534, 107, 2013 |