화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Evaluating the temperature dependence of heat-transfer based detection: A case study with caffeine and Molecularly Imprinted Polymers as synthetic receptors
Betlem K, Mahmood I, Seixas RD, Sadiki I, Raimbault RLD, Foster CW, Crapnell RD, Tedesco S, Banks CE, Gruber J, Peeters M
Chemical Engineering Journal, 359, 505, 2019
2 Evaluation of inoculum acclimatation and biochemical seasonal variation for the production of renewable gaseous fuel from biorefined Laminaria sp. waste streams
Tedesco S, Daniels S
Renewable Energy, 139, 1, 2019
3 Optimisation of biogas generation from brown seaweed residues: Compositional and geographical parameters affecting the viability of a biorefinery concept
Tedesco S, Daniels S
Applied Energy, 228, 712, 2018
4 A novel vertical greenery module system for building envelopes: The results and outcomes of a multidisciplinary research project
Serra V, Bianco L, Candelari E, Giordano R, Montacchini E, Tedesco S, Larcher F, Schiavi A
Energy and Buildings, 146, 333, 2017
5 An integrated design approach to the development of a vegetal-based thermal plaster for the energy retrofit of buildings
Carbonaro C, Tedesco S, Thiebat F, Fantucci S, Serra V, Dutto M
Energy and Buildings, 124, 46, 2016
6 Particle size reduction optimization of Laminaria spp. biomass for enhanced methane production
Tedesco S, Mac Lochlainn D, Olabi AG
Energy, 76, 857, 2014
7 Optimization of mechanical pre-treatment of Laminariaceae spp. biomass-derived biogas
Tedesco S, Barroso TM, Olabi AG
Renewable Energy, 62, 527, 2014
8 Mechanical pretreatment effects on macroalgae-derived biogas production in co-digestion with sludge in Ireland
Tedesco S, Benyounis KY, Olabi AG
Energy, 61, 27, 2013
9 A 0.10 mu m buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket
Guegan G, Deleonibus S, Caillat C, Tedesco S, Dal'zotto B, Heitzmann M, Nier ME, Mur P
Solid-State Electronics, 46(3), 343, 2002
10 A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching
Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL
Solid-State Electronics, 46(3), 349, 2002