1 |
Evaluating the temperature dependence of heat-transfer based detection: A case study with caffeine and Molecularly Imprinted Polymers as synthetic receptors Betlem K, Mahmood I, Seixas RD, Sadiki I, Raimbault RLD, Foster CW, Crapnell RD, Tedesco S, Banks CE, Gruber J, Peeters M Chemical Engineering Journal, 359, 505, 2019 |
2 |
Evaluation of inoculum acclimatation and biochemical seasonal variation for the production of renewable gaseous fuel from biorefined Laminaria sp. waste streams Tedesco S, Daniels S Renewable Energy, 139, 1, 2019 |
3 |
Optimisation of biogas generation from brown seaweed residues: Compositional and geographical parameters affecting the viability of a biorefinery concept Tedesco S, Daniels S Applied Energy, 228, 712, 2018 |
4 |
A novel vertical greenery module system for building envelopes: The results and outcomes of a multidisciplinary research project Serra V, Bianco L, Candelari E, Giordano R, Montacchini E, Tedesco S, Larcher F, Schiavi A Energy and Buildings, 146, 333, 2017 |
5 |
An integrated design approach to the development of a vegetal-based thermal plaster for the energy retrofit of buildings Carbonaro C, Tedesco S, Thiebat F, Fantucci S, Serra V, Dutto M Energy and Buildings, 124, 46, 2016 |
6 |
Particle size reduction optimization of Laminaria spp. biomass for enhanced methane production Tedesco S, Mac Lochlainn D, Olabi AG Energy, 76, 857, 2014 |
7 |
Optimization of mechanical pre-treatment of Laminariaceae spp. biomass-derived biogas Tedesco S, Barroso TM, Olabi AG Renewable Energy, 62, 527, 2014 |
8 |
Mechanical pretreatment effects on macroalgae-derived biogas production in co-digestion with sludge in Ireland Tedesco S, Benyounis KY, Olabi AG Energy, 61, 27, 2013 |
9 |
A 0.10 mu m buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket Guegan G, Deleonibus S, Caillat C, Tedesco S, Dal'zotto B, Heitzmann M, Nier ME, Mur P Solid-State Electronics, 46(3), 343, 2002 |
10 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL Solid-State Electronics, 46(3), 349, 2002 |