화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Cleaning of Si and properties of the HfO2-Si interface
Choi K, Harris H, Gangopadhyay S, Temkin H
Journal of Vacuum Science & Technology A, 21(3), 718, 2003
2 Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111)
Nikishin S, Kipshidze G, Kuryatkov V, Choi K, Gherasoiu I, de Peralta LG, Zubrilov A, Tretyakov V, Copeland K, Prokofyeva T, Holtz M, Asomoza R, Kudryavtsev Y, Temkin H
Journal of Vacuum Science & Technology B, 19(4), 1409, 2001
3 Luminescence of GaN/GaAs(111)B grown by molecular beam epitaxy with hydrazine
Nikishin SA, Antipov VG, Guriev AI, Elyukhin VA, Faleev NN, Kudriavtsev YA, Lebedev AB, Shubina TV, Zubrilov AS, Temkin H
Journal of Vacuum Science & Technology B, 16(3), 1289, 1998
4 Single phase ZnSnAs2 grown by molecular beam epitaxy
Seryogin GA, Nikishin SA, Temkin H, Schlaf R, Sharp LI, Wen YC, Parkinson B, Elyukhin VA, Kudriavtsev YA, Mintairov AM, Faleev NN, Baidakova MV
Journal of Vacuum Science & Technology B, 16(3), 1456, 1998
5 Compact Metalorganic Molecular-Beam Epitaxy Growth System
Hamm RA, Ritter D, Temkin H
Journal of Vacuum Science & Technology A, 12(5), 2790, 1994