1 |
Optimization of an Electron-Cyclotron-Resonance Etch Process Using Full Wafer Charge-Coupled-Device Interferometry Pendharkar SV, Resnick DJ, Dauksher WJ, Cummings KD, Tepermeister I, Conner WT Journal of Vacuum Science & Technology A, 15(3), 816, 1997 |
2 |
Comparison of Advanced Plasma Sources for Etching Applications .5. Polysilicon Etching Rate, Uniformity, Profile Control, and Bulk Plasma Properties in a Helical Resonator Plasma Source Lee JT, Layadi N, Guinn KV, Maynard HL, Klemens FP, Ibbotson DE, Tepermeister I, Egan PO, Richardson RA Journal of Vacuum Science & Technology B, 14(4), 2510, 1996 |
3 |
Plasma-Etching Process-Development Using in-Situ Optical-Emission and Ellipsometry Lee JT, Blayo N, Tepermeister I, Klemens FP, Mansfield WM, Ibbotson DE Journal of Vacuum Science & Technology B, 14(5), 3283, 1996 |
4 |
Comparison of Advanced Plasma Sources for Etching Applications .4. Plasma-Induced Damage in a Helicon and a Multipole Electron-Cyclotron-Resonance Source Blayo N, Tepermeister I, Benton JL, Higashi GS, Boone T, Onuoha A, Klemens FP, Ibbotson DE, Sawin HH Journal of Vacuum Science & Technology B, 12(3), 1340, 1994 |
5 |
Comparison of Advanced Plasma Sources for Etching Applications .1. Etching Rate, Uniformity, and Profile Control in a Helicon and a Multiple Electron-Cyclotron-Resonance Source Tepermeister I, Blayo N, Klemens FP, Ibbotson DE, Gottscho RA, Lee JT, Sawin HH Journal of Vacuum Science & Technology B, 12(4), 2310, 1994 |
6 |
Comparison of Advanced Plasma Sources for Etching Applications .2. Langmuir Probe Studies of a Helicon and a Multipole Electron-Cyclotron-Resonance Source Tepermeister I, Ibbotson DE, Lee JT, Sawin HH Journal of Vacuum Science & Technology B, 12(4), 2322, 1994 |
7 |
Comparison of Advanced Plasma Sources for Etching Applications .3. Ion Energy-Distribution Functions for a Helicon and a Multipole Electron-Cyclotron-Resonance Source Gibson GW, Sawin HH, Tepermeister I, Ibbotson DE, Lee JT Journal of Vacuum Science & Technology B, 12(4), 2333, 1994 |