화학공학소재연구정보센터
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No. Article
1 Optimization of an Electron-Cyclotron-Resonance Etch Process Using Full Wafer Charge-Coupled-Device Interferometry
Pendharkar SV, Resnick DJ, Dauksher WJ, Cummings KD, Tepermeister I, Conner WT
Journal of Vacuum Science & Technology A, 15(3), 816, 1997
2 Comparison of Advanced Plasma Sources for Etching Applications .5. Polysilicon Etching Rate, Uniformity, Profile Control, and Bulk Plasma Properties in a Helical Resonator Plasma Source
Lee JT, Layadi N, Guinn KV, Maynard HL, Klemens FP, Ibbotson DE, Tepermeister I, Egan PO, Richardson RA
Journal of Vacuum Science & Technology B, 14(4), 2510, 1996
3 Plasma-Etching Process-Development Using in-Situ Optical-Emission and Ellipsometry
Lee JT, Blayo N, Tepermeister I, Klemens FP, Mansfield WM, Ibbotson DE
Journal of Vacuum Science & Technology B, 14(5), 3283, 1996
4 Comparison of Advanced Plasma Sources for Etching Applications .4. Plasma-Induced Damage in a Helicon and a Multipole Electron-Cyclotron-Resonance Source
Blayo N, Tepermeister I, Benton JL, Higashi GS, Boone T, Onuoha A, Klemens FP, Ibbotson DE, Sawin HH
Journal of Vacuum Science & Technology B, 12(3), 1340, 1994
5 Comparison of Advanced Plasma Sources for Etching Applications .1. Etching Rate, Uniformity, and Profile Control in a Helicon and a Multiple Electron-Cyclotron-Resonance Source
Tepermeister I, Blayo N, Klemens FP, Ibbotson DE, Gottscho RA, Lee JT, Sawin HH
Journal of Vacuum Science & Technology B, 12(4), 2310, 1994
6 Comparison of Advanced Plasma Sources for Etching Applications .2. Langmuir Probe Studies of a Helicon and a Multipole Electron-Cyclotron-Resonance Source
Tepermeister I, Ibbotson DE, Lee JT, Sawin HH
Journal of Vacuum Science & Technology B, 12(4), 2322, 1994
7 Comparison of Advanced Plasma Sources for Etching Applications .3. Ion Energy-Distribution Functions for a Helicon and a Multipole Electron-Cyclotron-Resonance Source
Gibson GW, Sawin HH, Tepermeister I, Ibbotson DE, Lee JT
Journal of Vacuum Science & Technology B, 12(4), 2333, 1994