| 1 |
Hafnium-doped tantalum oxide high-k gate dielectrics
Lu J, Kuo Y, Tewg JY
Journal of the Electrochemical Society, 153(5), G410, 2006 |
| 2 |
Physical and electrical properties of Ta-N, Mo-N, and W-N electrodes on HfO2 high-k gate dielectric
Lu J, Kuo Y, Chatterjee S, Tewg JY
Journal of Vacuum Science & Technology B, 24(1), 349, 2006 |
| 3 |
Suppression of crystallization of tantalum oxide thin film by doping with zirconium
Tewg JY, Kuo Y, Lu J
Electrochemical and Solid State Letters, 8(1), G27, 2005 |
| 4 |
Influence of a 5 A tantalum nitride interface layer on dielectric properties of zirconium-doped tantalum oxide high-k films
Tewg JY, Kuo Y, Lu J, Schueler BW
Journal of the Electrochemical Society, 152(8), G617, 2005 |
| 5 |
Zirconium-doped tantalum oxide gate dielectric films integrated with molybdenum, molybdenum nitride, and tungsten nitride gate electrodes
Tewg JY, Kuo Y, Lu J
Journal of the Electrochemical Society, 152(8), G643, 2005 |
| 6 |
Electrical and physical characterization of zirconium-doped tantalum oxide thin films
Tewg JY, Kuo Y, Lu J, Schueler BW
Journal of the Electrochemical Society, 151(3), F59, 2004 |
