검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors Holland M, Stanley CR, Reid W, Hill RJW, Moran DAJ, Thayne I, Paterson GW, Long AR Journal of Vacuum Science & Technology B, 25(5), 1706, 2007 |
| 2 |
GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors Holland M, Stanley CR, Reid W, Thayne I, Paterson GW, Long AR, Longo P, Scott J, Craven AJ, Gregory R Journal of Vacuum Science & Technology B, 25(3), 1024, 2007 |
| 3 |
50 nm metamorphic GaAs and InPHEMTs Thayne I, Elgaid K, Moran D, Cao X, Boyd E, McLelland H, Holland M, Thoms S, Stanley C Thin Solid Films, 515(10), 4373, 2007 |
| 4 |
Low damage sputter deposition of tungsten for decanano compound semiconductor transistors Cao X, Macintyre DS, Thoms S, Li X, Zhou H, Wilkinson CDW, Holland M, Donaldson L, McEwan F, McLellend H, Thayne I Journal of Vacuum Science & Technology B, 23(6), 3138, 2005 |
| 5 |
Imprint lithography issues in the fabrication of high electron mobility transistors Thoms S, Macintyre DS, Moran D, Thayne I Journal of Vacuum Science & Technology B, 22(6), 3271, 2004 |
| 6 |
Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors Macintyre DS, Chen Y, Gourlay D, Boyd E, Moran D, Cao X, Elgaid K, Stanley CR, Thayne I, Thoms S Journal of Vacuum Science & Technology B, 21(6), 2783, 2003 |
| 7 |
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack Chen Y, Macintyre DS, Cao X, Boyd E, Moran D, McLelland H, Holland M, Stanley CR, Thayne I, Thoms S Journal of Vacuum Science & Technology B, 21(6), 3012, 2003 |
| 8 |
Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography Chen Y, Macintyre D, Boyd E, Moran D, Thayne I, Thoms S Journal of Vacuum Science & Technology B, 20(6), 2887, 2002 |
| 9 |
Scaling of pseudomorphic high electron mobility transistors to decanano dimensions Kalna K, Roy S, Asenov A, Elgaid K, Thayne I Solid-State Electronics, 46(5), 631, 2002 |