검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates Medjdoub F, Dessenne F, Thobel JL, Zaknoune M, Theron D Solid-State Electronics, 48(5), 683, 2004 |
| 2 |
The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter Bollaert S, Cordier Y, Zaknoune M, Happy H, Hoel V, Lepilliet S, Theron D, Cappy A Solid-State Electronics, 44(6), 1021, 2000 |
| 3 |
0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs Zaknoune M, Cordier Y, Bollaert S, Ferre D, Theron D, Crosnier Y Solid-State Electronics, 44(9), 1685, 2000 |
| 4 |
Nonselective wet chemical etching of GaAs and AlGaInP for device applications Zaknoune M, Schuler O, Mollot F, Theron D, Crosnier Y Journal of Vacuum Science & Technology B, 16(1), 223, 1998 |