검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Influence of high-temperature processing on the surface properties of bulk AlN substrates Tojo S, Yamamoto R, Tanaka R, Thieu QT, Togashi R, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Murakami H, Collazo R, Koukitu A, Monemar B, Sitar Z, Kumagai Y Journal of Crystal Growth, 446, 33, 2016 |
| 2 |
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor Murakami H, Takekawa N, Shiono A, Thieu QT, Togashi R, Kumagai Y, Matsumoto K, Koukitu A Journal of Crystal Growth, 456, 140, 2016 |
| 3 |
Growth of thick and high crystalline quality InGaN layers on GaN (000(1)over-bar) substrate using tri-halide vapor phase epitaxy Hirasaki T, Eriksson M, Thieu QT, Karlsson F, Murakami H, Kumagai Y, Monemar B, Holtz PO, Koukitu A Journal of Crystal Growth, 456, 145, 2016 |
| 4 |
High rate InN growth by two-step precursor generation hydride vapor phase epitaxy Togashi R, Thieu QT, Murakami H, Kumagai Y, Ishitani Y, Monemar B, Koukitu A Journal of Crystal Growth, 422, 15, 2015 |
| 5 |
MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor Thieu QT, Seki Y, Kuboya S, Katayama R, Onabe K Journal of Crystal Growth, 311(10), 2802, 2009 |
| 6 |
MOVPE and characterization of InAsN/GaAs multiple quantum wells Kuboya S, Thieu QT, Ono W, Nakajima F, Katayama R, Onabe K Journal of Crystal Growth, 298, 544, 2007 |