| 1 |
Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
Choi JH, Kim SJ, Kim HT, Cho SM
Korean Journal of Chemical Engineering, 35(6), 1348, 2018 |
| 2 |
Synthesis and characterization of thermally curable 4-(1,2,2-trifluorovinyloxy)benzoyl substituted poly(4-vinylphenol) for gate insulator in thin film transistor
Ki G, Jang KS, Ka JW, Ahn T
Molecular Crystals and Liquid Crystals, 660(1), 33, 2018 |
| 3 |
Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer
Lee SK, Seok KH, Chae HJ, Lee YH, Han JS, Jo HA, Joo SK
Solid-State Electronics, 129, 6, 2017 |
| 4 |
Room-temperature fabrication of a Ga-Sn-O thin-film transistor
Matsuda T, Takagi R, Umeda K, Kimura M
Solid-State Electronics, 134, 19, 2017 |
| 5 |
Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors
Lee S, Song Y, Park H, Zaslavsky A, Paine DC
Solid-State Electronics, 135, 94, 2017 |
| 6 |
Sputtered boron indium oxide thin-film transistors
Stewart KA, Gouliouk V, Keszler DA, Wager JF
Solid-State Electronics, 137, 80, 2017 |
| 7 |
Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers
Xie HT, Wu Q, Xu L, Zhang L, Liu GC, Dong CY
Applied Surface Science, 387, 237, 2016 |
| 8 |
Analytical approximation of the InGaZnO thin-film transistors surface potential
Colalongo L
Solid-State Electronics, 124, 1, 2016 |
| 9 |
Ambient effect on thermal stability of amorphous InGaZnO thin film transistors
Xu JE, Wu Q, Xu L, Xie HT, Liu GC, Zhang L, Dong CY
Solid-State Electronics, 126, 170, 2016 |
| 10 |
Thermal stability of amorphous InGaZnO thin film transistors passivated by AlOx layers
Hu Z, Zhou DX, Xu L, Wu Q, Xie HT, Dong CY
Solid-State Electronics, 104, 39, 2015 |
