| 1 |
Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
Abliz A, Xu L, Wan D, Duan HM, Wang JL, Wang CL, Luo SJ, Liu CS
Applied Surface Science, 475, 565, 2019 |
| 2 |
고분자 기판과 PECVD 절연막에 따른 ITZO 박막 트랜지스터의 특성 분석
양대규, 김형도, 김종헌, 김현석
Korean Journal of Materials Research, 28(4), 247, 2018 |
| 3 |
Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique
Qiang L, Liang XC, Cai GS, Pei YL, Yao RH, Wang G
Solid-State Electronics, 144, 22, 2018 |
| 4 |
Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method
Qiang L, Liang XC, Pei YL, Yao RH, Wang G
Thin Solid Films, 649, 51, 2018 |
| 5 |
Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions
Qiang L, Liu WG, Pei YL, Wang G, Yao RH
Solid-State Electronics, 129, 163, 2017 |
| 6 |
Performance improvement of poly-Si tunnel thin-film transistor by NH3 plasma treatment
Ma WCY, Chen YH, Lin ZY, Huang YS, Huang BS, Wu ZD
Thin Solid Films, 618, 178, 2016 |
| 7 |
Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors
Lee SH, Jun HS, Park JH, Kim W, Oh S, Park JS
Thin Solid Films, 620, 82, 2016 |
| 8 |
Distinction between interfacial layer effect and trap passivation effect of N-2 plasma treatment on LTPS-TFTs
Ma WCY
Solid-State Electronics, 100, 45, 2014 |
| 9 |
Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In-Ga-Zn-O thin film transistors
Chen BW, Chang TC, Hung YJ, Hsieh TY, Tsai MY, Liao PY, Tsai WW, Chiang WJ, Yan JY
Thin Solid Films, 572, 33, 2014 |
| 10 |
Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress
Hsieh TY, Chang TC, Chen TC, Tsai MY, Chen YT
Thin Solid Films, 528, 53, 2013 |
