검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Validating gallium nitride growth kinetics using a precursor delivery showerhead as a novel chemical reactor Parikh RP, Adomaitis RA, Aumer ME, Partlow DP, Thomson DB, Rubloff GW Journal of Crystal Growth, 296(1), 15, 2006 |
| 2 |
In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor-deposition process for real-time prediction of product crystal quality and advanced process control Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP, Parikh R, Adomaitis RA Journal of Vacuum Science & Technology B, 23(4), 1386, 2005 |
| 3 |
Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing Cho S, Rubloff GW, Aumer ME, Thomson DB, Partlow DP Journal of Vacuum Science & Technology B, 23(5), 1849, 2005 |
| 4 |
In situ chemical sensing in AlGaN/GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control Cho S, Janiak DS, Rubloff GW, Aumer ME, Thomson DB, Partlow DP Journal of Vacuum Science & Technology B, 23(5), 2007, 2005 |
| 5 |
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio Shin H, Arkun E, Thomson DB, Miraglia P, Preble E, Schlesser R, Wolter S, Sitar Z, Davis RF Journal of Crystal Growth, 236(4), 529, 2002 |
| 6 |
High temperature nucleation and growth of GaN crystals from the vapor phase Shin H, Thomson DB, Schlesser R, Davis RF, Sitar Z Journal of Crystal Growth, 241(4), 404, 2002 |
| 7 |
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions Danielsson E, Zetterling CM, Ostling M, Linthicum K, Thomson DB, Nam OH, Davis RF Solid-State Electronics, 46(6), 827, 2002 |
| 8 |
Dry etching and metallization schemes in a GaN/SiC heterojunction device process Danielsson E, Zetterling CM, Ostling M, Lee SK, Linthicum KJ, Thomson DB, Nam OH, Davis RF Materials Science Forum, 338-3, 1049, 2000 |