검색결과 : 12건
No. | Article |
---|---|
1 |
SOI MESFETs on high-resistivity, trap-rich substrates Mehr P, Zhang X, Lepkowski W, Li CJ, Thornton TJ Solid-State Electronics, 142, 47, 2018 |
2 |
Avalanche breakdown in SOI MESFETs Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ Solid-State Electronics, 91, 78, 2014 |
3 |
Silicon on insulator MESFETs for RF amplifiers Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ Solid-State Electronics, 54(3), 336, 2010 |
4 |
Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET Takulapalli BR, Laws GM, Liddell PA, Andreasson J, Erno Z, Gust D, Thornton TJ Journal of the American Chemical Society, 130(7), 2226, 2008 |
5 |
High aspect ratio cylindrical nanopores in silicon-on-insulator substrates Petrossian L, Wilk SJ, Joshi P, Hihath S, Posner JD, Goodnick SM, Thornton TJ Solid-State Electronics, 51(10), 1391, 2007 |
6 |
Large-signal modeling of SOI MESFETs Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton TJ Solid-State Electronics, 50(6), 943, 2006 |
7 |
Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation Khan T, Vasileska D, Thornton TJ Journal of Vacuum Science & Technology B, 23(4), 1782, 2005 |
8 |
Treatment of interface roughness in SOI-MESFETs Khan T, Vasileska D, Thornton TJ Journal of Vacuum Science & Technology B, 22(4), 2110, 2004 |
9 |
Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si : SiO2 interface Yang JM, de la Garza L, Thornton TJ, Kozicki M, Gust D Journal of Vacuum Science & Technology B, 20(4), 1706, 2002 |
10 |
Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications Rack MJ, Thornton TJ, Ferry DK, Huffman J, Westhoff R Solid-State Electronics, 45(7), 1199, 2001 |