화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 SOI MESFETs on high-resistivity, trap-rich substrates
Mehr P, Zhang X, Lepkowski W, Li CJ, Thornton TJ
Solid-State Electronics, 142, 47, 2018
2 Avalanche breakdown in SOI MESFETs
Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ
Solid-State Electronics, 91, 78, 2014
3 Silicon on insulator MESFETs for RF amplifiers
Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ
Solid-State Electronics, 54(3), 336, 2010
4 Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET
Takulapalli BR, Laws GM, Liddell PA, Andreasson J, Erno Z, Gust D, Thornton TJ
Journal of the American Chemical Society, 130(7), 2226, 2008
5 High aspect ratio cylindrical nanopores in silicon-on-insulator substrates
Petrossian L, Wilk SJ, Joshi P, Hihath S, Posner JD, Goodnick SM, Thornton TJ
Solid-State Electronics, 51(10), 1391, 2007
6 Large-signal modeling of SOI MESFETs
Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton TJ
Solid-State Electronics, 50(6), 943, 2006
7 Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation
Khan T, Vasileska D, Thornton TJ
Journal of Vacuum Science & Technology B, 23(4), 1782, 2005
8 Treatment of interface roughness in SOI-MESFETs
Khan T, Vasileska D, Thornton TJ
Journal of Vacuum Science & Technology B, 22(4), 2110, 2004
9 Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si : SiO2 interface
Yang JM, de la Garza L, Thornton TJ, Kozicki M, Gust D
Journal of Vacuum Science & Technology B, 20(4), 1706, 2002
10 Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications
Rack MJ, Thornton TJ, Ferry DK, Huffman J, Westhoff R
Solid-State Electronics, 45(7), 1199, 2001