검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics Galeti M, Rodrigues M, Martino JA, Collaert N, Simoen E, Claeys C Solid-State Electronics, 70, 44, 2012 |
| 2 |
Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks Dai CH, Chang TC, Chu AK, Kuo YJ, Hung YC, Lo WH, Ho SH, Chen CE, Shih JM, Chung WL, Chen HM, Dai BS, Tsai TM, Xia GR, Cheng O, Huang CT Thin Solid Films, 520(5), 1511, 2011 |
| 3 |
Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C Solid-State Electronics, 54(12), 1592, 2010 |