검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices Chandrasekaran S, Simanjuntak FM, Aluguri R, Tseng TY Thin Solid Films, 660, 777, 2018 |