검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Reliability of ultra-thin buried oxides for multi-V-T FDSOI technology Besnard G, Garros X, Nguyen P, Andrieu F, Reynaud P, Van Den Daele W, Bourdelle KK, Schwarzenbach W, Toffoli A, Kies R, Delprat D, Reimbold G, Cristoloveanu S Solid-State Electronics, 97, 8, 2014 |
| 2 |
Investigating doping effects on high-kappa metal gate stack for effective work function engineering Leroux C, Baudot S, Charbonnier M, Van Der Geest A, Caubet P, Toffoli A, Blaise P, Ghibaudo G, Martin F, Reimbold G Solid-State Electronics, 88, 21, 2013 |
| 3 |
Material engineering of GexTe100-x compounds to improve phase-change memory performances Navarro G, Sousa V, Persico A, Pashkov N, Toffoli A, Bastien JC, Perniola L, Maitrejean S, Roule A, Zuliani P, Annunziata R, De Salvo B Solid-State Electronics, 89, 93, 2013 |
| 4 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
| 5 |
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B Solid-State Electronics, 53(7), 786, 2009 |
| 6 |
Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs Andrieu F, Ernst T, Faynot O, Rozeau O, Bogumilowicz Y, Hartmann JM, Brevard L, Toffoli A, Lafond D, Ghyselen B, Fournel F, Ghibaudo G, Deleonibus S Solid-State Electronics, 50(4), 566, 2006 |
| 7 |
A new CMP-less integration approach for highly scaled totally silicided (TOSI) gate bulk transistors based on the use of selective S/D Si epitaxy and ultra-low gates Muller M, Mondot A, Aime D, Froment B, Talbot A, Roux JM, Ribes G, Morand Y, Descombes S, Gouraud P, Leverd F, Pokrant S, Toffoli A, Skotnicki T Solid-State Electronics, 50(4), 620, 2006 |
| 8 |
Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory Molas G, De Salvo B, Mariolle D, Ghibaudo G, Toffoli A, Buffet N, Deleonibus S Solid-State Electronics, 47(10), 1645, 2003 |
| 9 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL Solid-State Electronics, 46(3), 349, 2002 |