검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides Tokranov V, Madisetti S, Yakimov M, Nagaiah P, Faleev N, Oktyabrsky S Journal of Crystal Growth, 378, 631, 2013 |
| 2 |
Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer Greene A, Madisetti S, Nagaiah P, Yakimov M, Tokranov V, Moore R, Oktyabrsky S Solid-State Electronics, 78, 56, 2012 |
| 3 |
AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate Tokranov V, Nagaiah P, Yakimov M, Matyi RJ, Oktyabrsky S Journal of Crystal Growth, 323(1), 35, 2011 |
| 4 |
Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide Oktyabrsky S, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Bakhru H, Moore R, Tsai W Journal of Crystal Growth, 311(7), 1950, 2009 |
| 5 |
Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC Journal of Vacuum Science & Technology B, 25(4), 1491, 2007 |
| 6 |
In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAs Yakimov M, Tokranov V, Agnello G, van Eisden J, Oktyabrsky S Journal of Vacuum Science & Technology B, 23(3), 1221, 2005 |