검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs Gamarra P, Lacam C, Tordjman M, Medjdoub F, di Forte-Poisson MA Journal of Crystal Growth, 464, 143, 2017 |
| 2 |
Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices Gamarra P, Lacam C, Tordjman M, Splettstosser J, Schauwecker B, di Forte-Poisson MA Journal of Crystal Growth, 414, 232, 2015 |
| 3 |
Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC Gamarra P, Lacam C, Tordjman M, di Forte-Poisson MA Journal of Crystal Growth, 370, 282, 2013 |
| 4 |
Reversible Switch Memory Effect in Hydrogen-Terminated Ultrananocrystalline Diamond Tordjman M, Bolker A, Saguy C, Baskin E, Bruno P, Gruen DM, Kalish R Advanced Functional Materials, 22(9), 1827, 2012 |
| 5 |
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S Journal of Crystal Growth, 310(23), 5232, 2008 |
| 6 |
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD Poisson MADF, Sarazin N, Magis M, Tordjman M, Morvan E, Aubry R, di Persio J, Grimbert B Journal of Crystal Growth, 298, 826, 2007 |
| 7 |
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices Poisson MAD, Magis M, Tordjman M, Aubry R, Sarazin N, Peschang M, Morvan E, Delage SL, di Persio J, Quere R, Grimbert B, Hoel V, Delos E, Ducatteau D, Gaquiere C Journal of Crystal Growth, 272(1-4), 305, 2004 |
| 8 |
LPMOCVD growth of GaN on silicon carbide di Forte-Poisson MA, Romann A, Tordjman M, Magis M, Di Persio J, Jacques C, Vicente P Journal of Crystal Growth, 248, 533, 2003 |